Investigation on NBTI Control Techniques of HKMG Transistors for Low-power DRAM applications
Author:
Affiliation:
1. Samsung Electronics Co. Ltd.,DRAM Product & Technology,Pyeongtaek-City,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117706.pdf?arnumber=10117706
Reference10 articles.
1. Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations
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4. Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFET;krishman;IEEE ElectronDevice Letters,2013
5. 2nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond
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3. Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
4. Machine learning investigation of high-k metal gate processes for dynamic random access memory peripheral transistor;APL Materials;2024-02-01
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