Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5655256/5667896/05667898.pdf?arnumber=5667898
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
2. Performance analysis of SiGe-HBT-based transimpedance amplifiers with nonconstant gain-bandwidth technique;Analog Integrated Circuits and Signal Processing;2020-07-02
3. Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors;Russian Microelectronics;2018-11
4. An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits;IEEE Transactions on Nuclear Science;2014-12
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