Pulsed-IV and drain current transient study of AlGaN/GaN HEMTs
Author:
Affiliation:
1. Indian Institute of Technology, Delhi Hauz Khas,Department of Physics,New Delhi,India,11016
2. DRDO Timarpur,Solid State Physics Laboratory,New Delhi,India,110054
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776897.pdf?arnumber=9776897
Reference25 articles.
1. Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance
2. Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
3. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
4. Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
5. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
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