Plasma Assisted Molecular Beam Epitaxy Grown GaN Nanowires On Si (211) Substrates for UV Sensing Applications
Author:
Affiliation:
1. Indian Institute of Technology Delhi,Department of Physics,New Delhi,India
2. Solid State Physics Laboratory,New Delhi,India
3. Centre for Nano Science and Engineering, Indian Institute of Science,Bengaluru,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776961.pdf?arnumber=9776961
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1. Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants
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3. GaN nanowires: CVD synthesis and properties
4. Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
5. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
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