Reduction of leakage current of large-area high-resistivity silicon p-i-n photodiodes for detection at 1.06 µm
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31826/01481508.pdf?arnumber=1481508
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