Behavior of Avalanche-Induced Current Filament of High Voltage IGBTs at Over-voltage-Reference-Cited by-同舟云学术

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Behavior of Avalanche-Induced Current Filament of High Voltage IGBTs at Over-voltage

Published:2023-07-21 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT)
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Author:

Yang Wuhua¹,Liang Xiaogang¹,Zhang Chao¹,Su Le¹,Zhang Ruliang¹,Wang Cailin¹

Affiliation:

1. Xi'an University of Technology,Department of Electronic Engineering,Xi'an,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10244769/10244774/10245307.pdf?arnumber=10245307

Reference9 articles.

1. Destruction in the Active Part of an IGBT Chip Caused by Avalanche-Breakdown at the Edge Termination Structure

2. Limiting Factors of the Safe Operating Area for Power Devices

3. Temporally- and Spatially-Resolved Observations of Current Filament Dynamics in Insulated Gate Bipolar Transistor Chip During Avalanche Breakdown

4. Influence of Buffer Structures on Static and Dynamic Ruggedness of High Voltage FWDs

5. Avalanche injection and second breakdown in transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress;IEEE Transactions on Electron Devices;2024-08

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