28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K-Reference-Cited by-同舟云学术

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28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K

Published:2020 Issue: Volume:8 Page:646-654
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Nyssens Lucas^ORCID,Halder Arka,Esfeh Babak Kazemi^ORCID,Planes Nicolas,Flandre Denis^ORCID,Kilchytska Valeriya,Raskin Jean-Pierre^ORCID

Funder

Eniac “Places2Be”

Ecsel “Waytogofast” Projects

Fonds de la Recherche Scientifique—FNRS

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/09117028.pdf?arnumber=9117028

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1. De-Embedding Technology for Active and Passive Device Testing Used in the Microwave and Terahertz Bands: A Review: An Overview of Different De-Embedding Techniques;IEEE Microwave Magazine;2024-03

2. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024

3. Impedancemetry of multiplexed quantum devices using an on-chip cryogenic complementary metal-oxide-semiconductor active inductor;Chip;2023-12

4. A Polar-Modulation-Based Cryogenic Transmon Qubit State Controller in 28 nm Bulk CMOS for Superconducting Quantum Computing;IEEE Journal of Solid-State Circuits;2023-11

5. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

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