Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect-Reference-Cited by-同舟云学术

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Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Published:2020 Issue: Volume:8 Page:939-947
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Rassekh Amin^ORCID,Sallese Jean-Michel^ORCID,Jazaeri Farzan^ORCID,Fathipour Morteza^ORCID,Ionescu Adrian M.

Funder

European Research Council (ERC) through the ERC Advanced Grants Milli-Tech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/09184031.pdf?arnumber=9184031

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hysteresis impact of ferroelectric oxide on double-source vertical tunnel FET: DC and RF performance;The European Physical Journal Plus;2024-08-02

2. Analysis of Drain-Induced Barrier Lowering for Gate-All-Around FET with Ferroelectric;International Journal of Engineering and Technology Innovation;2024-03-27

3. Improved Process Induced Threshold Voltage Variability in Negative Capacitance Junctionless Transistors;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Negative capacitance gate stack and Landau FET-based voltage amplifiers and circuits: Impact of ferroelectric thickness and domain variations;Microelectronics Journal;2023-12

5. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials;Small;2023-10-29

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