Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs-Reference-Cited by-同舟云学术

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Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Published:2020 Issue: Volume:8 Page:407-412
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Muhea Wondwosen E.^ORCID,Castillo Gerard U.^ORCID,Ordonez Harold C.^ORCID,Gneiting Thomas^ORCID,Ghibaudo Gerard^ORCID,Iniguez Benjamin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/08974237.pdf?arnumber=8974237

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the Latch-Up Mechanism of DSOI at High Temperature;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor- and Horizontal Floating-Gate FET-Type Gas Sensors;IEEE Transactions on Electron Devices;2023-11

3. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors;Coatings;2023-02-13

4. A 65-dB SNDR Continuous-Time Delta-Sigma ADC Integrated By IZO Thin-Film Transistors;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

5. Low Frequency Noise of Channel-All-Around (CAA) InGaZnO Field Effect Transistors;IEEE Electron Device Letters;2022-12

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