Analysis of FDSOI-Negative Capacitance MOSFET with Respect to Different Oxide Thickness and Temperatures
Author:
Affiliation:
1. VIT-AP University Amaravathi Near,School of Electronics Engineering,Vijayawada,India,522501
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10134754/10134560/10134875.pdf?arnumber=10134875
Reference28 articles.
1. Analysis of RF Inductive Effect in S-Parameters of Body Contact PD-SOI MOSFETs
2. Sinha. Performance analysis of device characteristics in Negative Capacitance Field Effect Transistor;singh;Proceed-ings of the 2nd International Conference on Electronics and Sustainable Communication Systems ICESC,2021
3. Progress and future prospects of negative capacitance electronics: A materials perspective
4. Analysis of negative capacitance mosfets characteristic with spacer;yu-chun;2020 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA),2020
5. Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing
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