Numerical Analysis of the LDMOS With Side Triangular Field Plate-Reference-Cited by-同舟云学术

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Numerical Analysis of the LDMOS With Side Triangular Field Plate

Published:2019 Issue: Volume:7 Page:1055-1062
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Yao Jiafei^ORCID,Deng Yu,Guo Yufeng^ORCID,Zhang Zhenyu,Zhang Jun^ORCID,Zhang Maolin^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08854244.pdf?arnumber=8854244

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect;IEEE Transactions on Electron Devices;2021-12

2. Silicon-on-Insulator Lateral DMOS With Potential Modulation Plates and Multiple Deep-Oxide Trenches;IEEE Transactions on Electron Devices;2021-10

3. Deep neural network-based approach for breakdown voltage and specific on-resistance prediction of SOI LDMOS with field plate;Japanese Journal of Applied Physics;2021-06-16

4. Novel Si/SiC heterojunction lateral double-diffused metal–oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit*;Chinese Physics B;2021-03-01

5. Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance;IEEE Access;2020

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