Impact of High TID Irradiation on Stability of 65 nm SRAM Cells
Author:
Affiliation:
1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Funder
Natural Science Foundation of Xinjiang Uygur Autonomous Region
Youth Innovation Promotion Association Chinese Academy of Sciences
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9777895/09749086.pdf?arnumber=9749086
Reference33 articles.
1. Total ionizing dose effects in MOS oxides and devices
2. Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology
3. Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction
4. Two Fast Methods for Estimating the Minimum Standby Supply Voltage for Large SRAMs
5. Quantification of the Memory Imprint Effect for a Charged Particle Environment
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2. Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells;IEEE Transactions on Nuclear Science;2024-03
3. Analysis of SRAM PUF integrity under ionizing radiation: Effects of stored data and technology node;IEEE Transactions on Nuclear Science;2023
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