5 A/1.17 kV NiO/$\beta$-Ga2O3 heterojunction power rectifier with high-temperature operation capability up to 548 K
Author:
Affiliation:
1. School of Electronic Science and Engineering, Nanjing University,Nanjing,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147400.pdf?arnumber=10147400
Reference14 articles.
1. Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode
2. Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga2O3
3. Trap-mediated bipolar charge transport in NiO/ Ga2O3 p+-n heterojunction power diodes;wang;Sci China Mater,2022
4. Forward tunneling current in GaN-based blue light-emitting diodes
5. Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire
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