High RF-high power dual capacitively coupled plasma characteristics dependency on process parameters: a finite element analysis approach
Author:
Affiliation:
1. Intel Corporation,Substrate Packaging Technology Development,Chandler,Arizona,USA
2. Intel Corporation,Core Competency,Chandler,Arizona,USA
3. ULVAC Inc.,Kanagawa,Japan
Funder
Intel Corporation
Lam Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10564841/10564831/10564940.pdf?arnumber=10564940
Reference13 articles.
1. The impact of frequency mixing on sheath properties: Ion energy distribution and Vdc∕Vrf interaction
2. Simulation of Capacitively Coupled Single- and Dual-Frequency RF Discharges
3. Numerical investigation of ion-energy-distribution functions in single and dual frequency capacitively coupled plasma reactors
4. VizGrain: a new computational tool for particle simulations of reactive plasma discharges and rarefied flow physics
5. PLAZMARK plasma dots to visualize plasma process
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