A Reliable 8T SRAM for High-Speed Searching and Logic-in-Memory Operations
Author:
Affiliation:
1. School of Information Science and Technology, ShanghaiTech University, Shanghai, China
2. Department of Electrical and Computer Engineering, Binghamton University SUNY, Binghamton, NY, USA
Funder
National Natural Science Foundation of China
Shanghai Science and Technology Commission Funding
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Software
Link
http://xplorestaging.ieee.org/ielx7/92/9775758/09760704.pdf?arnumber=9760704
Reference36 articles.
1. A 65 nm 32 b Subthreshold Processor With 9T Multi-Vt SRAM and Adaptive Supply Voltage Control
2. A 290-mV, 3.34-MHz, 6T SRAM With pMOS Access Transistors and Boosted Wordline in 65-nm CMOS Technology
3. Recryptor: A Reconfigurable Cryptographic Cortex-M0 Processor With In-Memory and Near-Memory Computing for IoT Security
4. X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories
5. Comparative Study of Various Latch-Type Sense Amplifiers
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