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High-Dimensional and Multiple-Failure-Region Importance Sampling for SRAM Yield Analysis

  • Published:2017-03 Issue:3 Volume:25 Page:806-819
  • ISSN:1063-8210
  • Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • language:
  • Short-container-title:IEEE Trans. VLSI Syst.

Author:

Wang MengshuoORCID,Yan Changhao,Li Xin,Zhou Dian,Zeng XuanORCID

Funder

Key Technologies R&D Program

National Natural Science Foundation of China

Recruitment Program of Global Experts (the Thousand Talents Plan)

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variability-Aware Noise-Induced Dynamic Instability of Ultra-Low-Voltage SRAM Bitcells;2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS);2024-02-27

2. Minimum Max-Rank Method for High-Sigma Yield Analysis;2023 International Symposium of Electronics Design Automation (ISEDA);2023-05-08

3. Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-04

4. ML-Accelerated Yield Analysis Framework Using Regularization for Sparsity in High-Sigma and High-Dimensional Scenarios;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-04

5. An efficient SRAM yield analysis method based on scaled-sigma adaptive importance sampling with meta-model accelerated;Integration;2023-03
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