Novel Write-Enhanced and Highly Reliable RHPD-12T SRAM Cells for Space Applications-Reference-Cited by-同舟云学术

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Novel Write-Enhanced and Highly Reliable RHPD-12T SRAM Cells for Space Applications

Published:2020-03 Issue:3 Volume:28 Page:848-852
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Zhao Qiang,Peng Chunyu^ORCID,Chen Junning,Lin Zhiting^ORCID,Wu Xiulong^ORCID

Funder

National Natural Science Foundation of China

Doctoral Foundation of Fuyang Normal University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/92/9011687/08956093.pdf?arnumber=8956093

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation hardened P-Quatro 12T SRAM cell with strong SEU tolerance for aerospace applications;Microelectronics Reliability;2024-11

2. Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique;IEEE Transactions on Device and Materials Reliability;2024-09

3. SHRCO: Design of an SRAM with High Reliability and Cost Optimization for Safety-Critical Applications;2024 IEEE International Test Conference in Asia (ITC-Asia);2024-08-18

4. Design of polarity hardening SRAM for mitigating single event multiple node upsets;Microelectronics Journal;2024-07

5. A High Critical Charge 16T Soft-Error-Aware SRAM for Aerospace Applications;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

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