Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process-Reference-Cited by-同舟云学术

Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
language:
Short-container-title:

Author:

Fanning David¹,Corrion Andrea¹,Siddiqi Georges¹,Nadri Souheil¹,Denninghoff Dan¹,Arkun Erdem¹,Dadafshar Sadaf¹,Ramos Ignacio¹,Moyer Harris¹,Fu Andy¹,Carlson John¹,Bharadwaj Shyam¹

Affiliation:

1. HRL Laboratories, LLC,Malibu,CA,USA

Funder

Defense Advanced Research Projects Agency

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310792.pdf?arnumber=10310792

Reference5 articles.

1. Progress Towards a 40nm GaN Foundry;herrault;DARPA ERI 2020 Summit,2020

2. Improving manufacturability of highly scaled RF GaN HEMTs;siddiqi;2022 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH),2022

3. Heterogeneously Integrated RF Circuits Using Highly Scaled off-the-Shelf GaN HEMT Chiplets

4. Fully Passivated Aln/Gan based T3.5 HeMT device with 56% PAE and 1.2 db NFmin at 94 GHz;arkun;Government Microcircuit Applicat Critical Technol Conf,2023

5. 220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic;shinohara;Int Electron Devices Meeting (IEDM),0

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated 75-100 GHz In-Band Full-Duplex Front End GaN MMIC;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. A W-Band GaN MMIC Single-Chip T/R Front End;IEEE Transactions on Microwave Theory and Techniques;2024