The Impact of a Taper Impedance Transformation on the TRL De-Embedding Error
Author:
Affiliation:
1. DETI, Instituto de Telecomunicações, Universidade de Aveiro, Campus Universitário de Santiago, Aveiro, Portugal
Funder
FCT/MCTES
EU funds
FCT
European Social Fund Plus
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/9171629/10599363/10547231.pdf?arnumber=10547231
Reference37 articles.
1. Millimeter-Wave Rectifiers Using Proprietary Schottky Diodes: Diode Modeling and Rectifier Analysis
2. Modeling and Characterization of RF and Microwave Power FETs
3. Nonlinear Device Model of Microwave Power GaN HEMTs for High Power-Amplifier Design
4. A new empirical nonlinear model for HEMT and MESFET devices
5. Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
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