An Overview of Processing-in-Memory Circuits for Artificial Intelligence and Machine Learning-Reference-Cited by-同舟云学术

An Overview of Processing-in-Memory Circuits for Artificial Intelligence and Machine Learning

Published:2022-06 Issue:2 Volume:12 Page:338-353
ISSN:2156-3357
Container-title:IEEE Journal on Emerging and Selected Topics in Circuits and Systems
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Circuits Syst.

Author:

Kim Donghyuk¹^ORCID,Yu Chengshuo²^ORCID,Xie Shanshan³,Chen Yuzong⁴,Kim Joo-Young¹^ORCID,Kim Bongjin⁵^ORCID,Kulkarni Jaydeep P.³^ORCID,Kim Tony Tae-Hyoung²^ORCID

Affiliation:

1. Electrical Engineering Department, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

2. Electrical and Electronic Engineering Department, Nanyang Technological University, Singapore

3. Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX, USA

4. Electrical and Computer Engineering Department, National University of Singapore, Singapore

5. Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/5503868/9794907/09737485.pdf?arnumber=9737485

Reference67 articles.

1. Language models are few-shot learners;brown;arXiv 2005 14165,2020

2. BERT: Pre-training of deep bidirectional transformers for language understanding;devlin;arXiv 1810 04805,2018

3. A 43pJ/cycle non-volatile microcontroller with 4.7 ?s shutdown/wake-up integrating 2.3-bit/cell resistive RAM and resilience techniques;wu;IEEE ISSCC Dig Tech Papers,2019

4. Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study

5. 7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancements in Artificial Intelligence Circuits and Systems (AICAS);Electronics;2023-12-26

2. Static Noise Margin in 16 nm FinFET 6T and 8T SRAM Cells for Compute-in-Memory;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04

3. Nanoelectronics Using Metal–Insulator Transition;Advanced Materials;2023-11-30

4. A High-Precision Voltage-Quantization-Based Current-Mode Computing-in-Memory SRAM;Micromachines;2023-11-29

5. An N-Type Pseudo-Static eDRAM Macro with Reduced Access Time for High-Speed Processing-in-Memory in Intelligent Sensor Hub Applications;Sensors;2023-11-22