Development of resistors with Ta<sub>x</sub>N<sub>y</sub> deposited by RF sputtering using lithography technique-Reference-Cited by-同舟云学术

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Development of resistors with Ta_xN_y deposited by RF sputtering using lithography technique

Published:2023-08-28 Issue: Volume: Page:
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Container-title:2023 37th Symposium on Microelectronics Technology and Devices (SBMicro)
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Author:

César R. R.¹,Mederos M.²,Joanni E.³,Andrade V. M.³,Teixeira R. C.³,Diniz J. A.¹

Affiliation:

1. CCSNano University of Campinas – UNICAMP,Center for Semiconductor Components and Nanotechnology,Campinas,Brazil

2. Gleb Wataghin Institute of Physics – IFGW,Campinas,Brazil

3. Renato Archer Information Technology Center - CTI,Campinas,Brazil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302490.pdf?arnumber=10302490

Reference10 articles.

1. Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

2. Multi-Chip Module (MCM-D) using thin film technology

3. Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N and Ta-N-O thin films;stravev;Thin Solid Films,1997

4. Reactive sputter deposition and characterization of tantalum nitride thin films

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