Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch-Reference-Cited by-同舟云学术

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Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch

Published:2022-07 Issue:7 Volume:69 Page:7255-7262
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Zhang Ao^ORCID,Gao Jianjun^ORCID

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/9709233/09484667.pdf?arnumber=9484667

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Improved Nonlinear I‐V Model for GaN HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2024-01

2. Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-04

3. Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode;IEEE Transactions on Electron Devices;2022-09

4. An Extensive Large Signal Equivalent Circuit Model of GaAs-PIN Photodiode;IEEE Electron Device Letters;2022-08

5. Comprehensive Analysis of Linear and Nonlinear Equivalent Circuit Model for GaAs-PIN Diode;IEEE Transactions on Industrial Electronics;2021

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