Quasi-vertical GaN SBD device structure and parameter optimization
Author:
Affiliation:
1. Beijing University of Technology,Faculty of Information Optoelectronics Technology Lab, Ministry of Education,Beijing,China,100124
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10070951.pdf?arnumber=10070951
Reference4 articles.
1. Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate
2. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
3. GaN-The dawn of the third generation of semiconductors [J];chun-guang;Journal of Semiconductors,1999
4. Research on the growth and application of third-generation semiconductor materials [J];jia-xi;Journal of Hebei University of Technology,2002
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