A Prediction for Allowable Maximum Turn-on Speed of SiC Power Module by A Correlation Between Turn-on Transient Waveforms
Author:
Affiliation:
1. ZJU-Hangzhou Global Scientific and Technological Innovation Center,Hangzhou,China,311200
2. Zhejiang University,College of Electrical Engineering,Hangzhou,China,310027
Funder
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10070936.pdf?arnumber=10070936
Reference13 articles.
1. Understanding TurnOn Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics;zhang;Energy 2020,2020
2. Studies on characteristics of fast switching and near-field electromagnetic emissions for silicon carbide power modules;zhang;PhD dissertation,2021
3. Analysis and Experimental Evaluation of Middle-Point Inductance's Effect on Switching Transients for Multiple-Chip Power Module Package
4. Parasitic capacitances and inductances hindering utilization of the fast switching potential of SiC power modules. Simulation model verified by experiment
5. Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter
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