Wire bond metallurgy for high temperature electronics-Reference-Cited by-同舟云学术

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Wire bond metallurgy for high temperature electronics

Published: Issue: Volume: Page:
ISSN:
Container-title:1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145)
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Author:

Benoit J.T.,Chin S.,Grzybowski R.R.,Shun-Tien Lin ,Jain R.,McCluskey P.,Bloom T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5566/14900/00676770.pdf?arnumber=676770

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of High-Temperature Power Electronics Converters;IEEE Transactions on Power Electronics;2022-12

2. Advanced Wire Bonding Technology: Materials, Methods, and Testing;Materials for Advanced Packaging;2016-11-19

3. A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications;IEEE Transactions on Power Electronics;2014-05

4. 18 kW three phase inverter system using hermetically sealed SiC phase-leg power modules;2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC);2010-02

5. High temperature reliability of aluminium wire-bonds to thin film, thick film and low temperature co-fired ceramic (LTCC) substrate metallization;Microelectronics Reliability;2008-10

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