Patterned n<tex>$ +$</tex>Implant Into InP Substrate for HBT Subcollector-Reference-Cited by-同舟云学术

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Patterned n<tex>$ +$</tex>Implant Into InP Substrate for HBT Subcollector

Published:2004-10 Issue:10 Volume:51 Page:1736-1739
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen M.Y.,Sokolich M.,Chow D.H.,Bui S.,Royter Y.,Hitko D.A.,ThomasIII S.,Fields C.H.,Rajavel R.D.,Shi B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29495/01337190.pdf?arnumber=1337190

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs;IEEE Transactions on Electron Devices;2007-03

2. Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors;Applied Physics Letters;2006-07-10

3. High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N+ implant;Solid-State Electronics;2005-06

4. A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS);IEEE Electron Device Letters;2005-03

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