Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)-Reference-Cited by-同舟云学术

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Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

Published:2022-05-22 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Yun Nick¹,Lynch Justin¹,Morgan Adam J¹,Xing Diang²,Jin Michael²,Qian Jiashu²,Kang Minseok²,Amarasinghe Voshadhi³,Ransom John³,Veliadis Victor⁴,Agarwal Anant²,Sung Woongje¹

Affiliation:

1. State University of New York Polytechnic Institute,College of Nanoscale Science and Engineering,Albany,NY,USA,12203

2. The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210

3. X-FAB,Lubbock,TX,USA,79415

4. North Carolina State University,PowerAmerica Institute,Raleigh,NC,USA,27695

Funder

PowerAmerica

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813639.pdf?arnumber=9813639

Reference9 articles.

1. Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

2. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

3. A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

4. Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications

5. New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

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