Modelling an electro-optical modulator based on a vertical p – n junction in a silicon-on-insulator structure
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Published:2019-11-01
Issue:11
Volume:49
Page:1036-1044
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ISSN:1063-7818
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Container-title:Quantum Electronics
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language:
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Short-container-title:Quantum Electron.
Author:
Tsarev A.V.,Taziev R.M.
Abstract
Abstract
We report the results of numerical simulation of a Mach – Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p – n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of – 5 V and an active length of 1.7 mm, the optical frequency bandwidth of ∼ 50 GHz can be achieved. A special doping profile of the p – n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of –3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials