Infrared photomodulation spectroscopy of an In 0.22Ga 0.78Sb/GaSb single quantum well
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range
2. Electroluminescence out to 2.1 mu m observed in GaSb/InxGa1-xSb quantum wells grown by MOVPE
3. Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy
4. Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
5. GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy
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1. Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications;Physics Letters A;2023-04
2. Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading;Applied Surface Science;2020-06
3. Structural and optical properties of GaSbBi/GaSb quantum wells [Invited];Optical Materials Express;2018-03-14
4. Spin-orbit interaction effects on the electronic structure of coaxial quantum well wires;Superlattices and Microstructures;2017-01
5. Magnetic field effects on the electron Raman scattering in coaxial cylindrical quantum well wires;Journal of Luminescence;2013-11
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