Author:
Gadzhieva N.N.,Akhmedova G.B.
Abstract
IR-Fourier spectroscopy was used to study structural changes in γ-irradiated high density polyethylene composites with GaAs and GaAs<Te> semiconductor fillers at room temperature. From the dose dependence of the crystallinity degree of the HDPE/GaAs and HDPE/GaAs<Te> composites, it was found that the HDPE/GaAs<Te> composites are more radiation-resistant in the absorbed dose region Фγ = 5…150 kGy compared to the HDPE/GaAs composites. The observed change in the degree of crystallinity is associated with a change in the supramolecular structure of γ-irradiated composites.
Publisher
Problems of Atomic Science and Technology
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