Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers-Reference-Cited by-同舟云学术

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Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers

Published:2018 Issue:4 Volume:11 Page:590-603
ISSN:2095-1531
Container-title:Chinese Optics
language:en
Short-container-title:中国光学

Author:

QIU Bo-cang 仇伯仓,MARTIN Hai HU 胡海,WANG Wei-min 汪卫敏,LIU Wen-bin 刘文斌,BAI Xue 白雪

Publisher

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Subject

Atomic and Molecular Physics, and Optics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions;Chinese Optics;2023

2. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities;Chinese Optics;2020

3. 975 nm Semiconductor Lasers with Ultra-Low Internal Optical Loss;Acta Optica Sinica;2020

4. Development of Semiconductor Lasers;Chinese Journal of Lasers;2020

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