Low Operating Voltage IGZO Thin-film Transistor Based on Ultrathin Al2O3 Gate Insulator and Its Application in Common-source Amplifier-Reference-Cited by-同舟云学术

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Low Operating Voltage IGZO Thin-film Transistor Based on Ultrathin Al2O3 Gate Insulator and Its Application in Common-source Amplifier

Published:2020 Issue:4 Volume:41 Page:451-460
ISSN:1000-7032
Container-title:Chinese Journal of Luminescence
language:en
Short-container-title:发光学报

Author:

ZHANG Hao 张浩,LI Jun 李俊,ZHAO Ting-ting 赵婷婷,GUO Ai-ying 郭爱英,LI Tong-kuai 李痛快,MAO Shuai-shuai 茅帅帅,YUAN Li 原理,ZHANG Jian-hua 张建华

Publisher

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Subject

Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution-Processed High Performance Ytterbium-Doped In₂O₃ Thin Film Transistor and Its Application in Common-Source Amplifier;IEEE Transactions on Electron Devices;2023-03

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