Compound Semiconductor Bulk Materials and Characterizations
Author:
Affiliation:
1. Nagoya Institute of TechnologyJapan
Publisher
WORLD SCIENTIFIC
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy;Applied Physics Express;2018-05-22
4. Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films;Physical Chemistry Chemical Physics;2017
5. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma;Physical Chemistry Chemical Physics;2016
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