TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS

Author:

XING HUILI G.1,MISHRA UMESH K.1

Affiliation:

1. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA

Abstract

DC I-V characteristics of AlGaN/GaN heterojunction bipolar transistors (HBTs) and GaN homojunction bipolar transistors (BJTs) are analyzed in the temperature range of 200-450 K. At low current levels, the adverse effects of poor ohmic contacts coupled with paths of high leakage make it difficult to extract intrinsic device operation ["Explanation of anomalous current gain observed in GaN based bipolar transistors", Xing et al. IEEE Elect. Dev. Lett. 24(1) 2003:p.4-6]. At intermediate current levels, owing to enhanced ionization of Mg in the base, the HBTs show an increase in current gain resulting from mitigated current crowding, and the BJTs show a decrease in current gain resulting from reduction of emitter injection coefficient. The offset voltage dependence on temperature is also explained.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

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