LOWER TEMPERATURE FORMATION OF ALUMINA THIN FILMS THROUGH SOL–GEL ROUTE

Abstract

Bayerite sol is spun onto single crystal Si substrate, after synthesis and optimization, to obtain films of thickness ~ 0.2 μm. The deposited films are room temperature dried and then heated up to a temperature of 350°C in order to obtain Al 2 O 3. Surface and structural changes, during heating, are observed with optical microscopy. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) are used for post-treatment analyses/characterization. The as-deposited and heated samples' surfaces are smooth as seen with optical and scanning electron microscope in case of optimized conditions. XRD patterns show the change from amorphous to crystalline behavior of these films when heated under various conditions. The most stable form of aluminum oxide, i.e. α- Al 2 O 3, is obtained when samples are heated up to a temperature of as low as 350°C. The thin films are also deposited onto sodalime glass substrates in order to confirm Al 2 O 3 formation through band gap probing. Photoconduction is used to find the energy band gap, which comes out to be 4.7 eV; lower value is correlated to the defect induced states in the band gap.