A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)-Reference-Cited by-同舟云学术

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A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

Published:2003-08 Issue:04 Volume:10 Page:669-675
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

Gard F. S.¹²,Riley J. D.¹,Leckey R.¹,Usher B. F.³

Affiliation:

1. Department of Physics, La Trobe University, Vic. 3086, Australia

2. Department of Physics, Sultan Qaboos University, PO Box 36, Post Code 123, Sultanate of Oman

3. Department of Electronic Engineering, La Trobe University, Vic. 3086, Australia

Abstract

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X03005384

Reference15 articles.

1. Novel beryllium containing II–VI compounds: basic properties and potential applications

2. Persistent sourcing of coherent spins for multifunctional semiconductor spintronics

3. Surface processes during heteroepitaxy of ZnSe onGaAs(111)Aas observed by reflection high-energy electron diffraction

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