STUDY OF LOW-k DIELECTRIC ORGANIC POLYMER THIN FILMS DEPOSITED BY A PECVD METHOD

Abstract

Plasma polymerized methylcyclohexane thin films were deposited on silicon substrates at room temperature and different RF powers using a plasma-enhanced chemical vapor deposition (PECVD) method. The as-grown thin films were annealed in a vacuum. Methylcyclohexane monomer was utilized as an organic precursor, and hydrogen and argon were used as the bubbled and carrier gases, respectively. The as-grown plasma-polymer organic thin films were analyzed by FT-IR and SEM and in terms of their hardness and modulus and their capacitance values. Annealed polymer thin films were also analyzed. The dielectric constant of the thin films increased as the plasma power was increased. The minimum dielectric constant was 1.82.