Affiliation:
1. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, Storrs, CT 06269-4157, USA
Abstract
We have investigated the residual in-plane strain and width of the surface misfit dislocation free zone in linearly-graded GaAs1-yPy metamorphic buffer layers as approximated by a finite number of sublayers. For this purpose we have developed an electric circuit model approach for the equilibrium analysis of these structures, in which each sublayer may be represented by an analogous configuration involving a current source, a resistor, a voltage source, and an ideal diode. The resulting node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. Utilizing this new approach, we show that the residual surface strain in linearly-graded epitaxial structures increases monotonically with grading coefficient as well as the number of sublayers, and is strongly dependent on the width of the misfit dislocation free zone, which diminishes with an increasing grading coefficient.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials