QUANTUM TRANSPORT IN SEMICONDUCTOR DEVICES

Author:

FERRY D. K.1,VASILESKA D.1,GRUBIN H. L.2

Affiliation:

1. Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, USA

2. SRA, Inc., P O. Box 1058, Glastonbury, CT 06033, USA

Abstract

It is clear that continued scaling of semiconductor devices will bring us to a regime in which device gate lengths are less than 50 nm within another decade. Pushing to dimensional sizes such as this will probe the transition from classical to quantum transport, and there is no present approach to the quantum regime that has proved effective. Contrary to the classical case in which electrons are negligibly small, the finite extent of the momentum space available to the electron sets size limitations on the minimum wave packet—this is of the order of a few nanometers. While quantum transport formalism has been applied to a variety of problems, in most cases it has not been overly successful. In this paper, we discuss the problems and some of the approximate approaches which will ease the above-mentioned transition.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Bibliography;The Wigner Monte Carlo Method for Nanoelectronic Devices;2013-03-20

2. Wigner ensemble Monte-Carlo simulation of nano-MOSFETs in degenerate conditions;physica status solidi (c);2008-01

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