BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES-Reference-Cited by-同舟云学术

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BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES

Published:2004-12 Issue:04 Volume:14 Page:921-1128
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

LEVINSHTEIN M. E.,KOSTAMOVAARA J.,VAINSHTEIN S.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S012915640400306X

Reference201 articles.

1. Theory of Electron Multiplication in Silicon and Germanium

2. Impact ionization in AIIIBV semiconductors in high electric fields

3. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impact of parasitic inductance on the dV/dt ruggedness of 4H-SiC Schottky diodes;Microelectronics Reliability;2021-07

2. Calculation of the Paschen Curve by Solving of the Self-sustaining Condition for Different Mixtures;ICREEC 2019;2020

3. Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region;IEEE Transactions on Electron Devices;2007-10

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