Affiliation:
1. Cree, Inc. 4600 Silicon Drive, Durham NC 27703, USA
Abstract
In recent years SiC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices. Applications for heteroepitaxial GaN-based structures on SiC substrates include lasers and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials
Cited by
12 articles.
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