GRAPHENE TUNNELING TRANSIT-TIME DIODES: CONCEPT, CHARACTERISTICS, AND ULTIMATE PERFORMANCE-Reference-Cited by-同舟云学术

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GRAPHENE TUNNELING TRANSIT-TIME DIODES: CONCEPT, CHARACTERISTICS, AND ULTIMATE PERFORMANCE

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:Physics, Chemistry and Applications of Nanostructures
language:
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Author:

RYZHII V.¹,OTSUJI T.¹,RYZHII M.²,LEIMAN V. G.³,SEMENENKO V. L.³,ARSENIN A. V.³,MITIN V.⁴

Affiliation:

1. Research Institute for Electrical Communication, Tohoku University, 980-8577 Sendai, Japan

2. Computational Nanoelectronics Laboratory, University of Aizu, 965-8580 Aizu-Wakamatsu, Japan

3. Department of General Physics, Moscow Institute of Physics and Technology, 141-700 Dolgoprudny, Russia

4. Department of Electrical Engineering, University at Buffalo, Buffalo, 1460-1920 NY, USA

Publisher

WORLD SCIENTIFIC

Reference2 articles.

1. GaAs TUNNETT Diodes

2. Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p–i–n Junction

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