ANALYSIS OF NOISE CHARACTERISTICS OF GaAs TUNNEL DIODES-Reference-Cited by-同舟云学术

ANALYSIS OF NOISE CHARACTERISTICS OF GaAs TUNNEL DIODES

Published:2013-09 Issue:03 Volume:12 Page:1350014
ISSN:0219-4775
Container-title:Fluctuation and Noise Letters
language:en
Short-container-title:Fluct. Noise Lett.

Author:

PALENSKIS VILIUS¹,MATUKAS JONAS¹,VYŠNIAUSKAS JUOZAS¹,PRALGAUSKAITĖ SANDRA¹,SHTRIKMAN HADAS²,SELIUTA DALIUS³,KAŠALYNAS IRMANTAS³,VALUŠIS GINTARAS³

Affiliation:

1. Radiophysics Department, Vilnius University, LT-10222 Vilnius, Lithuania

2. Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel

3. Optoelectronics Department, Center for Physical Sciences and Technology, LT-01108 Vilnius, Lithuania

Abstract

An analysis and investigation of noises of GaAs tunnel diodes, which abrupt p+-n+ profile was obtained by using amphoteric nature of silicon, were performed. The main scope of this work was to verify the concepts of the explanation of white noise characteristics on the ground of shot noise and on the ground of the Gupta theorem of thermal noise in resistive elements. The other scope was to investigate the peculiarities of low frequency noise in p+-n+ junctions formed by using amphoteric silicon nature.

Publisher

World Scientific Pub Co Pte Lt

Subject

General Physics and Astronomy,General Mathematics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219477513500144

Reference23 articles.

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