A QFGMOS-Based gm-Boosted and Adaptively Biased Two-Stage Amplifier Offering Very High Gain and High Bandwidth
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Published:2021-09-25
Issue:
Volume:
Page:2250056
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ISSN:0218-1266
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Container-title:Journal of Circuits, Systems and Computers
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language:en
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Short-container-title:J CIRCUIT SYST COMP
Author:
Bansal Urvashi1ORCID,
Bakre Abhilasha1,
Kumar Prem1,
Yadav Devansh1,
Kumar Mohit1,
Raj Niranjan1
Affiliation:
1. ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India
Abstract
A low voltage low power two-stage CMOS amplifier with high open-loop gain, high gain bandwidth product (GBW) and enhanced slew rate is presented in this work. The proposed circuit makes use of folded cascode gm-boosting cells in conjunction with a low voltage gain enhanced cascode mirror using quasi-floating gate (QFGMOS) transistors. QFGMOS transistors are also used in input pair and adaptive biasing, which facilitate large dynamic output current in the presented circuit. Consequently, the slew rate is enhanced without much increase in static power dissipation. The unity gain frequency (UGF) and dc gain of the circuit are 29.4[Formula: see text]MHz and 132[Formula: see text]dB, respectively. The amplifier is operated at 0.6[Formula: see text]V dual supply with 89[Formula: see text][Formula: see text]W power consumption and has a nearly symmetrical average slew rate of 51.5[Formula: see text]V/[Formula: see text]s. All simulations including Monte Carlo and corner analysis are carried out using 180-nm CMOS technology for validating the design with help of spice tools.
Publisher
World Scientific Pub Co Pte Ltd
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture