Endurance Behavior of Z-Shaped Charge Plasma Tunnel FET for Biosensing Application

Abstract

The tunneling field effect transistor (TFET) is a viable candidate for designing a highly sensitive biosensor. In this work, a doping-less Z-shaped dielectrically modulated charge plasma TFET (CPTFET) structure with misaligned cavity region on channel and source has been proposed for label-free biosensing applications. To design the device, charge plasma technique has been employed, where appropriate metal workfunction is used over intrinsic silicon to create n[Formula: see text] drain and p[Formula: see text]source regions. The charge plasma approach reduces thermal budget, random dopant fluctuation (RDF) and steps required for fabrication. The Z-shaped CPTFET includes the advantage of abrupt profile of doping at source-channel (tunneling) junction. Because cavities are created in source and gate oxide region, the abrupt doping profile suppresses ambipolar behavior and improves sensitivity. The performance of the proposed device for both charged and neutral biomolecules in terms of electric field, band energy, transfer characteristics, [Formula: see text] ratio and subthreshold swing (SS) has been examined. The response of other parameters like cavity thickness and cavity length on ON current has been analyzed using the Silvaco ATLAS device simulator.