Monolayer Graphene Field Effect Transistor-Based Operational Amplifier-Reference-Cited by-同舟云学术

Monolayer Graphene Field Effect Transistor-Based Operational Amplifier

Published:2019-02-24 Issue:03 Volume:28 Page:1950052
ISSN:0218-1266
Container-title:Journal of Circuits, Systems and Computers
language:en
Short-container-title:J CIRCUIT SYST COMP

Author:

Safari Ali¹,Dousti Massoud²^ORCID,Tavakoli Mohammad Bagher¹

Affiliation:

1. Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

2. Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

Abstract

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are tuned in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Link

https://www.worldscientific.com/doi/pdf/10.1142/S021812661950052X

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