LASER-STIMULATED DOPING OF SILICON WITH MAGNESIUM

Abstract

The results of experiments involving the laser-stimulated doping of silicon with magnesium following thermal diffusion are presented. It has been shown that the Nd-laser irradiation (λ=1.06 μ m ) leads to the increase of the solubility and diffusion coefficient of magnesium in silicon. The current-voltage, capacity-voltage characteristics as well as the thermo-stimulated current spectra of doped samples have been investigated. The rectified behavior of the investigated structures is observed. It is shown that the laser irradiation leads to the formation of Mg centers with Ec-0.13 eV and Ec-0.28 eV energy levels.