Formation mechanism of Cu/Cu3Sn–Cu/Cu interconnections based on solder-filled microporous copper as interlayer via a current-assisted thermal compression bonding

Author:

Li Xiang1,Sun Fenglian1,Pan Zhen1

Affiliation:

1. School of Material Science and Engineering, Harbin University of Science and Technology, Harbin, China

Abstract

In this study, a Cu/Cu3Sn–Cu/Cu interconnection can be achieved based on solder-filled microporous copper (MPC) as interlayer via a current-assisted thermal compression bonding. The high-temperature soldering connection materials can be used in the third-generation semiconductor packaging, so as to meet the promising application in high-temperature power device packaging. The influence of auxiliary current on the microstructure evolution of Cu–Sn IMCs and its formation mechanism were studied. Experiments show that the action of Joule heat coupled with the electron wind significantly enhanced the interfacial reaction at the Cu/Sn metallization interface. The microstructure of Cu6Sn5 changed from scallop-like into columnar due to constitutional supercooling, and the dispersion distribution of Cu6Sn5 also changed. The growth constitutive equations of Cu3Sn in bondlines were established under current-assisted thermal compression bonding process.

Funder

Natural Science Foundation of Xinjiang Province

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Strain rate-dependent tensile deformation and failure behavior in single-crystal β-Sn;Modern Physics Letters B;2024-04-27

2. Low-Temperature Cu-Cu Bonding by Using Cu₂O Nanoparticle Coated Hierarchical Structure;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-05

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