DETERMINATION OF DENSITY-OF-STATES OF NANOCLUSTER CARBON THIN FILMS MIS STRUCTURE USING CAPACITANCE–VOLTAGE TECHNIQUE

Abstract

Nanocluster carbon thin films (NC) were deposited at room temperature by cathodic arc process. These films were clustered, amorphous and disordered in nature which is verified using Raman spectroscopy. Density of defect states (DOS), which influences electronic and optical properties, were determined from the capacitance–voltage (C–V) characteristic of Al / NC / c - Si metal–insulator–semiconductor (MIS) structure near the Fermi level of undoped samples. Dielectric constant of the films was also estimated using the same technique. The DOS were found to be varying from 5.68 × 1016 to 4.9 × 1019 cm-3. The dielectric constant varied between 2.76 to 11.8.