A THEORETICAL INVESTIGATION OF THE ELECTRICAL PROPERTIES OF ZnMgO/ZnO HETEROJUNCTION FIELD EFFECT TRANSISTOR

Abstract

In this paper, I have tried to analyze the electrical properties and the experimental data related to drain current–drain voltage of the Zn 0.7 Mg 0.3 O / ZnO / Zn 0.7 Mg 0.3 O heterojunction field effect transistor by use of Hoffman nonideal model theoretically. Also by use of different scattering mechanisms in two-dimensional electron gas structures, I have studied the electrical transport properties of this structure and most important effective parameters for controlling electron mobility in the range of 75 to 300 K have been studied theoretically.